Abstract
We investigate the effect of room-temperature hydrogen-plasma treatment on the photoconductivity of SiGe nanoparticles sandwiched within SiO2 layers. An increase in photocurrent intensity of more than an order magnitude is observed after the hydrogen plasma treatment. The enhancement is attributed to neutralization of dangling bonds at the nanoparticles and to passivation of nonradiative defects in the oxide matrix and at SiGe/matrix interfaces. We find that increasing the partial pressure of hydrogen to pressures where H3+ and H2+ were the dominant ions results in increased photocurrent.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
