Abstract
The enhanced near band edge emission from a ZnO thin film and nanorod array by capping aluminum nanoparticles has been studied by photoluminescence spectra. The enhancement is attributed to the resonant coupling between the bandgap transition of the semiconductor and the surface plasmon of metal nanoparticles. It is also found that the Al nanoparticles support the surface plasmon from the deep-UV to the visible region with different annealing temperatures. This cost-effective approach is useful for manufacturing highly efficient optoelectronic devices.
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