Abstract
Na0.5Bi0.5(Ti0.98Nb0.02)O3+δ (NBTNb) thin films are fabricated under N2 and O2, respectively. For comparison, the Na0.5Bi0.5TiO3 (NBT) thin film under O2 is also prepared. The co-effects of Nb5+-doping and annealing atmosphere on microstructure, ferroelectric and dielectric properties of NBT thin film are investigated. The XRD results show that all the thin films have crystallized into phase-pure polycrystalline perovskite structure. Under O2 annealing ambience, compared with NBT thin film, enhanced ferroelectricity is achieved for NBTNb, which can be ascribed to the reduced leakage current and TiO6 octahedral distortion. Furthermore, the NBTNb annealed under N2 exhibits a well-defined polarization–electric field hysteresis loop with a larger remanent polarization (Pr) of 10.7μC/cm2, which can be due to the well-crystallized structure with smooth surface and high densification. Also, the dielectric constant (εr) and dissipation factor (tanδ) versus frequency show smaller dispersion with a εr of 402 and tanδ of 0.065 at 100kHz.
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