Abstract
Diamond film was synthesized by microwave plasma chemical vapor deposition (MWPCVD) method. A three-step deposition process of diamond film was using on 4-inch pre-seeded mirror polished silicon wafer. Scanning electron microscopy (SEM), Raman spectroscopy and in-situ stress measured were employed to characterize the structure and property of diamond film. The electron emission from large area diamond film was described and compared with that from diamond film deposited on Si substrate scratched by diamond powder, the results suggested that low-field electron emission and high emission current can be obtained from the diamond film deposited on seeded substrate.
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