Abstract
Spontaneous emission of the free excitons in GaAs quantum wells in a microcavity is enhanced (x 130) or inhibited (x 1 30 ) by placing excitonic dipoles at either a resonant wavelength and anti-node position or an off-resonant wavelength and node position of the standing-wave vacuum field fluctuations. The resulting spontaneous radiation pattern is highly concentrated into the normal direction for the enhancement case and the spontaneous emission coupling efficiency into a single microcavity resonant mode is estimated to be 0.3. It is expected that semiconductor lasers with substantially reduced threshold currents can be constructed using such a structure.
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