Abstract
This work has proposed a new way to optimize the spherical cap-shaped patterned sapphire substrate (PSS) for highly efficient GaN-based light emitting diodes (LEDs), which has been compared with the hemisphere patterned one. This pattern is achieved by changing the height of hemispherical units on the basis of hemispherical PSS. The height, the distance and the radius of the spherical cap-shaped unit are subsequently optimised by optical simulation. It is revealed that this optimised spherical cap-shaped PSS can enhance light extraction yield of LEDs by over 10% compared with LEDs grown on the optimal hemispherical PSS. The effectiveness of this spherical cap-shaped PSS has been demonstrated by subsequent crystal growth and characterization of LED wafers, and therefore sheds light on a further improvement on LED efficacy by the design of novel patterns for the application of PSS technology.
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