Abstract
We have grown ZnO thin films on glass substrate by R.F magnetron sputtering using metallic zinc target. The influences of some parameters on thin film optical properties were assessed. They exhibited extremely high resistivity of 1012 Ω.cm, an energy gap of 3.3 eV at room temperature. It was found that a R.F power of 50 W, a target to substrate distance of 70 mm, very low gas pressures of 3.35 x 10-3 Torr of argon and oxygen mixed gas atmosphere gave ZnO thin films with a good homogeneity and a high crystallinity. All the films are transparent in the visible region (400 to 800 nm) with average transmittance above 80 %. The optical transmittance and refractive index, calculated from the spectra of optical absorbance, show a significant dependence on the growth parameters. As for the sample grown at 100°C, the average transmittance is about 80% in the visible wavelength range and the refractive index is estimated to be 1.97. key words: ZnO; R.F sputtering magnetron; X-ray diffraction; transmittance; refractive index.
Highlights
Zinc oxide is one of the most interesting II–IV compound semiconductors with a wide direct band gap of 3.3 eV (Meng and Dos Santos, 1994; Inukai et al, 1995; Han and Jou, 1995; Craciun et al, 1995; Subramanyam et al., 1999; Sanchez-Juarez et al, 1998; Sourdi et al, 2012; Yang Ming Lu et al, 2007)
We investigated the effect of the substrate temperature and the oxygen-argon mixture gas on the properties of ZnO films
The Equation (8) shows that the refractive index n is determined explicitly
Summary
Zinc oxide is one of the most interesting II–IV compound semiconductors with a wide direct band gap of 3.3 eV (Meng and Dos Santos, 1994; Inukai et al, 1995; Han and Jou, 1995; Craciun et al, 1995; Subramanyam et al., 1999; Sanchez-Juarez et al, 1998; Sourdi et al, 2012; Yang Ming Lu et al, 2007). The measurement of light transmission through a parallel plate dielectric film, in the working range considered, is sufficient to determine the real and imaginary parts of the complex refractive index and thickness. Manifacier et al (1976) have developed a method, like in the same range of applicability but differs from Lyashenko and Miloslavskii (1964) accuracy by: Firstly, the calculation processing and the data is easier, and secondly it provides an explicit expression for n, k and thickness. This last method we have used to characterize our samples of zinc oxide thin film prepared.
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