Abstract
BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused Ti effectively traps and releases oxygen vacancies and consequently stabilizes the resistive switching in BiFeO3 MIM structures. Therefore, using Ti implantation of the bottom electrode, the retention performance can be greatly improved with increasing Ti fluence. For the used raster-scanned Ti implantation the lateral Ti distribution is not homogeneous enough and endurance slightly degrades with Ti fluence. The local resistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO3 grain size by local Ti implantation of the bottom electrode.
Highlights
During BFO thin film deposition plays an important role
We show that the Ti diffusion can be engineered before the BFO thin film deposition by Ti implantation of the Pt bottom electrode on Sapphire substrates
The Ti distribution in the Pt/Sapphire after the Ti implantation was estimated by the Stopping and Range of Ions in Matter (SRIM) 2013 code[37,38]
Summary
During BFO thin film deposition plays an important role. A model based on modifiable Schottky barrier heights was proposed to explain the bipolar resistive switching in BFO thin films, in which the ionized oxygen vacancies ( VO⋅ ) and diffused Ti act as mobile and fixed donors, respectively. We show that the Ti diffusion can be engineered before the BFO thin film deposition by Ti implantation of the Pt bottom electrode on Sapphire substrates. This offers a deeper understanding on the role of the fixed Ti donors in the resistive switching of BFO thin films
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