Engineering ESD Robust LDMOS SCR Devices in FinFET Technology

Abstract

A robust FinFET silicon-controlled rectifier (SCR) LDMOS ESD protection device is developed. Replacing the drain contact implant to the P+ implant from N+ implant creates an SCR inside the LDMOS and when the N+ contact is removed a Schottky SCR LDMOS is created. The ESD performance of the baseline FinFET LDMOS is Zero, while that of the SCR LDMOS is 9.2 mA/ $\mu {\mathrm{ m}}$ and Schottky SCR is 4.6 mA/ $\mu \text{m}$ respectively.