Abstract
Energy transfer from F centres to the dopant ions in photostimulated processes is examined. It was found that in alkali halide systems the radiation defects are disposed in near vicinity of the dopants. Recombination of defects also takes place to a limited extent near the dopant with a fast and high-yield energy transfer to the latter. Role of unrelaxed H centres in the formation of donor-acceptor pairs is discussed. Some special exciton energy transfer mechanisms are analysed as well.
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