Abstract
The electronic states of a Kane type semiconductor quantum well with magnetic field are theoretically investigated and compared with those of a quantum wire of the same size. Calculations are performed for a hard-wall confinement potential and the size dependence of the effective g-values in bare InSb type quantum well for electrons and light holes are found, respectively. It has been seen that the effective g-value of the electrons and light holes are decreased with the increasing of quantum well thickness.
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