Abstract
Si-rich SiO/sub 2/ films (SRO) and Er-doped, Si-rich SiO/sub 2/ films (EnSRO) were deposited by reactive RF magnetron co-sputtering followed by thermal annealing in a nitrogen atmosphere in order to investigate the optimum condition for efficient 1.54 /spl mu/m emission. Reference Er in stoichiometric SiO/sub 2/ (Er:SiO/sub 2/) films were deposited for comparison. The room temperature photoluminescence intensity of SRO films without Er was found to be maximized at 38 at% Si after annealing at 1100/spl deg/C for 1 hour. On the contrary, we found that the maximized Er photoluminescence of Er:SRO with 38 at% Si and an Er concentration of 10/sup 20/ cm/sup -3/ occurred for annealing temperatures between 600/spl deg/C and 800/spl deg/C. Under these conditions the 1.54 /spl mu/m Er emission is enhanced by more than two orders of magnitude relative to Er:SiO/sub 2/ samples while negligible SRO emission is observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
