Abstract
A new method is described for determining the energy of emitting centers in an interface-state continuum independently of the emission rate in transient-capacitance measurements on MIS structures. Deep-level transient spectroscopy (DLTS) is performed in the double-correlation mode to analyze the energy profile of a continuous interface-trap distribution. With this method, DLTS can be used to evaluate interface-state distributions with energy-dependent capture cross sections, and the extraneous effects of bulk defect levels in the semiconductor are minimized. Experimental results are presented for electron traps at the Si-SiO2 interface.
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