Abstract
The energy relaxation rate of light in-plane holes in InAs .15Sb .85/InSb quantum wells has been measured using a Shubnikov-de Haas technique. In this Type II system, the holes reside in the InSb layers; strain reverses the heavy-light hole ordering and thus light holes are the charge carriers. The samples consist of 20 to 100 InAs .15Sb .85/InSb periods 100Å/200Å thick. The InAsSb barriers are doped with Be. The total carrier concentration p ≈ 1×10 11 cm −2 is obtained from Hall data. Shubnikov-de Haas oscillation amplitudes are measured and used to determine the light hole temperature for a given applied power. The steady state power per carrier is equated to the energy relaxation rate to determine the carrier temperature T H. The measured rate for low electric fields is proportional to T H n -T L n with n ≈ 3.2 and 2.5 for two different samples. These data are compared with theory and experiment for light holes in InGaAs/GaAs quantum wells.
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