Abstract
The potential application of Plasma Enhanced Chemical Vapour Deposition (PECVD) oxides as gate, storage mode, or isolation dielectrics in Very Large Scale Integration (VLSI) technology, and as gate dielectrics in compound semiconductors or thin film transistor devices has been documented. There is considerable evidence that the composition is not uniform in oxides grown by PECVD. As the oxide layers are very thin computer controlled parallel EELS of cross sectional specimens was used to obtain composition profiles. The films used in this study were deposited on a (100) Si substrate at 300° C under conditions that were believed to result in stoichiometrically correct SiO2 as determined by AES. The layer width was believed to be 70Å, as determined by linear extrapolation of a thickness versus deposition time curve obtained from larger deposition times.Figure 1 shows a cross-section high resolution electron micrographs taken taken along the (110) zone axis at a defocus of-370Å , respectively, from a slightly thick region of the specimen (150-200Å)..
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