Abstract
The morphological forms of oxygen-containing precipitates and other defects in heat-treated silicon have been the subject of a number of TEM investigations, but little direct evidence has been given for the amount of oxygen in them and their crystallography. Electron energy loss spectroscopy appears to be the most promising microanalytical method for detecting and measuring the amount of oxygen present in these small precipitates. Yang, et al have reported evidence for oxygen in large precipitates (∿lμm) in heat-treated silicon, obtained by examining EL spectra taken from precipitate pit sites in etched Si foils. We report here ELS results from small Si-0 precipitates that formed in CZ silicon wafers during post-growth heat treatment. The interstitial oxygen concentration in the as grown Si was ∿2 x 1018 cm-3. Following growth the cut wafers were given a two step anneal: (1) 16 hrs. @ 800°C in nitrogen and (2) 16 hrs. @ 1050°C in dry oxygen. Transmission specimens were made by ion beam thinning.
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