Abstract
NiO is an attractive p-type transparent semiconductor that is being explored for a variety of applications. We report a systematic study of the electronic properties, relevant to hole-transporting materials in solar energy conversion applications, of NiO synthesized by atomic layer deposition (ALD). The acceptor concentration, flat band potential, and valence band position were determined by electrochemical Mott–Schottky analysis of impedance data in aqueous electrolytes for films less than 100 nm in thickness on F:SnO2 (FTO)-coated glass substrates. The effects of postdeposition annealing and film thickness were studied. Oxidation of the NiO was observed at temperatures as low as 300 °C in 1 atm of oxygen. Films annealed at 400 °C and above in Ar exhibited signs of thermal decomposition. Thinner films were found to have a higher carrier concentration. F:SnO2 and thermally evaporated Ag were both observed to form ohmic contact to ALD-synthesized TiO2 and NiO. A p/n heterojunction diode was fabricated from...
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