Abstract
Longitudinal piezoresistance measurements at 15 K have been carried out on n-and p-type inversion layers of silicon. By evaluating the n-channel results the energy difference between the lowest subbands of different E(k) valleys is calculated. The results give evidence for an internal strain and are in reasonable agreement with the theoretical values.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
