Abstract
Using the tight-binding approach, we study the band gaps of boron nitride (BN)/ graphene nanoribbon (GNR) planar heterostructures, with GNRs embedded in a BN sheet. The width of BN has little effect on the band gap of a heterostructure. The band gap oscillates and decreases from 2.44 eV to 0.26 eV, as the width of armchair GNRs, , increases from 1 to 20, while the band gap gradually decreases from 3.13 eV to 0.09 eV, as the width of zigzag GNRs, , increases from 1 to 80. For the planar heterojunctions with either armchair-shaped or zigzag-shaped edges, the band gaps can be manipulated by local potentials, leading to a phase transition from semiconductor to metal. In addition, the influence of lattice mismatch on the band gap is also investigated.
Highlights
Since its discovery in 2004, graphene has become a research field of tremendous interest [1,2], and has led to the rise in two-dimensional materials
We report results from a study that explored the band structure of lattice-matched graphene nanoribbon (GNR) embedded in boron nitride (BN)-sheet-forming planar heterostructures via the tight-binding approach
It was found that band gaps change with the width of GNRs. For both armchair GNRs (AGNRs) and zigzag GNRs (ZGNRs) embedded in a BN sheet, the band structures can be controlled by local potentials, and a similar phase transition can be achieved
Summary
Since its discovery in 2004, graphene has become a research field of tremendous interest [1,2], and has led to the rise in two-dimensional materials. One method is to stack them together to form a van der Waals heterojunction [13,14,15] This structure has a smaller systemic dimension, and it produces interesting physical properties that are not available in a single material [16]. Wang et al successfully prepared chiral, controllable, monolayer GNRs via a two-step growth method in experiments They directly embedded monolayer GNRs in BN nano-trenches by modifying the ratio of working-gases [23], and achieved edge control of graphene domains on h-BN [24,25]. This structure shows excellent electronic properties and has attracted considerable attention. For both armchair GNRs (AGNRs) and zigzag GNRs (ZGNRs) embedded in a BN sheet, the band structures can be controlled by local potentials, and a similar phase transition can be achieved
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