Abstract
The application of microcalorimeter-based energy dispersive x-ray spectroscopy (EDS) analysis to high-performance integrated circuit (IC) barrier layers for copper metallization is presented. Microcalorimeter EDS analysis of ternary TaSiN films are compared to that carried out using conventional Si(Li) EDS detectors. The elimination of elemental peak overlaps provided by the improved energy resolution of the microcalorimeter-based detector is demonstrated for the TaSiN spectra and is used to examine the efficacy of such an approach for electron microscopy-based compositional analysis of ultra-thin barrier films currently being investigated for giga-scale ICs.
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