Abstract
A technique to determine the conduction band discontinuity in any heterostructure and the resulting band alignment is presented. Energy bandgaps of the quaternary AlGaAsSb and conduction band discontinuity for lattice matched Al x Ga 1− x As 1− y Sb y /InAs, Al x Ga 1− x As 1− y Sb y /In 0.8Ga 0.2As and Al x Ga 1− x As 1− y Sb y /In 0.52Ga 0.48As heterostructures are reported for varying Al and Sb mole fractions to demonstrate the method. Al x Ga 1− x As 1− y Sb y /InAs changes from a type-II broken-gap alignment to type-II staggered alignment near an Al mole fraction of 0.15 followed by a change from type-II to type-I near an Al mole fraction of 0.9. No type-II broken-band alignments are observed in the other two lattice matched systems. The minimum Al mole fraction required for type-I band alignment increases with increasing In mole fraction. It is shown that the quaternary bandgap becomes indirect for Al mole fractions greater than approximately 0.4 and the conduction band discontinuity is a linear function of the Al mole fraction for the lattice-matched systems.
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