Abstract
Vapor-phase grown ZnO crystals were investigated by means of DLTS measurements. The generation of defect center E4 subsequent to annealing in different ambients was monitored. By conducting electron irradiations with energies, where either both the Zn- and O-sublattice are damaged or according to [1] only the Zn-lattice, a chemical assignment to the defect centers E4 and E3 could be accomplished. DLTS investigations of ZnO samples under illumination give evidence that E4 is a negative-U center.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
