Abstract
SiC BJT with varying emitter width were investigated by numerical simulations as well as experiments. Emitter size effects (ESEs) are demonstrated in today's SiC BJT by comparing the characterization of BJT with different emitter width. Surface recombination current is found to be comparable with published result for heterojunction bipolar transistors (HBTs). In SiC BJT design, this effect has to be considered. A good surface passivation is required to reduce the effect of surface recombination on the current gain
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