Abstract
Phosphorus-doped CuGaS 2 layers were grown on (001) GaP substrates by metalorganic vapor phase epitaxy. The p-type conductivity was controllable under the phosphine flow rate conditions. The rectification characteristics of a p-CuGaS 2/n-GaP heterostructure indicated that the p–n junction was formatted. Orange light electroluminescence was observed from the CuGaS 2-based diode at room temperature.
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