Abstract
The six articles in this special section focus on emerging memory technologies. Technology scaling of traditional memory technologies, such as SRAM and DRAM, is increasingly constrained by fundamental technology limits. The recent research progress of various emerging memory device technologies, such as three-dimensional integrated memory, phase-change RAM, spin-transfer-torque magnetoresistive RAM, and resistive RAM, has drawn tremendous attentions from both academy and industry. These technologies bring many research opportunities and challenges for novel architectures, systems, applications, design tools, compilers, and programming models and languages. As these emerging memory technologies are maturing, it is important for us to understand their pros and cons for improving the performance, power, reliability, and scalability of future computer systems.
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