Abstract
Recently, significant progress has been made in III‐nitride nanocrystals. They exhibit unique structural, electronic, optical, and photocatalytic properties, and have emerged as a functional platform to realize high‐performance optoelectronic, electronic, quantum, and solar energy devices. Compared with conventional III‐nitride epilayers and quantum wells, dislocation‐free III‐nitride nanocrystals can, in principle, be achieved on lattice mismatched foreign substrates due to the efficient surface strain relaxation. In this Feature Article, the authors discuss the epitaxy, characteristics, and some emerging device applications of III‐nitride nanocrystals grown by plasma‐assisted molecular beam epitaxy.
Highlights
They exhibit unique structural, electronic, optical, and photocatalytic properties, and have emerged as a functional platform to realize high-performance optoelectronic, electronic, quantum, and solar energy devices
Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. His teaching and research interests are in the areas of III-nitride semiconductors, light emitting diode (LED), lasers, quantum photonics, solar fuels, and artificial photosynthesis
InGaN nanocrystals grown by molecular beam epitaxy (MBE) is well suited for realizing multi-color light emitters in a single growth process
Summary
Given that dislocation-free nanocrystals can be grown directly on foreign substrates due to the efficient surface strain relaxation, the coalescence of nanocrystals has been studied for forming high-quality templates on foreign substrates.[45,46,47] the presence of any mismatch between the crystal orientations at the coalescence boundary can lead to dislocations during the coalescence process.[48]. It is expected that dislocation-free AlGaN template with arbitrary alloy compositions can be realized on foreign substrates Key to this process is control over the nucleation of nanocrystals to achieve identical crystalline orientation, crystal dimension, and well-defined position. Faqrul Chowdhury is a postdoctoral researcher at the Department of Physics, McGill University, Canada, who completed his Ph.D. in Electrical and Computer Engineering from the same institution as a Vanier Canada Graduate Scholar He examines to understand and overcome the complexities and bottlenecks associated with artificial photosynthesis processes and systems. Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor His teaching and research interests are in the areas of III-nitride semiconductors, LEDs, lasers, quantum photonics, solar fuels, and artificial photosynthesis
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