Abstract
The process of indium sulfide film growth on indium phosphide substrates in a quasi-closed volume is investigated by ellipsometric methods. An original ellipsometric technique is suggested for the investigation of optically inhomogeneous structures based on multiangle measurements of Ψ and Δ parameters with an independent determination of the complex reflection factor of the film. The kinetics of In2S3 film growth on InP is shown to be determined by a linear-parabolic law, and the optical inhomogeneity of the film thickness is considered to be associated with the non-uniform distribution of sulfur in the films. [Russian Text Ignored]
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