Abstract
The nucleation and defect structure of GaAs films grown on Ge(001) by molecular-beam epitaxy (MBE) and ion-assisted MBE (IAMBE) were studied using reflection high-energy electron diffraction and transmission electron microscopy. Three-dimensional (3D) islands nucleated during the initial stages of MBE growth at 580 °C, and continued growth led to nonplanar surfaces and a high density of stacking faults and twins in the films. Irradiation by 33 eV Ar ions during IAMBE growth at 580 °C suppressed 3D island nucleation, yielding relatively flat surfaces throughout growth. Antiphase domains were the only defects observed in the IAMBE films.
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