Abstract
Selective W chemical vapor deposition (CVD) on Mo interconnections is studied to elucidate the surface cleaning mechanism in the initial stages of W CVD in a gas system using ellipsometry, x‐ray photoelectron spectroscopy, and Auger electron spectroscopy. Molybdenum oxide formed on the Mo interconnections during LSI fabrication processes is automatically removed by the reaction with to form intermediates such as volatile molybdenumoxyfluorides,, following the chemical reaction: . This reaction exposes a Mo clean surface, and W deposition begins as soon as the oxide has been removed. From a contact‐string test of two‐layer interconnections, the contact resistivity with W‐filled via holes on Mo interconnections is found to be lower than . This excellent contact characteristic is attributable to the surface cleaning effect on Mo by the reaction with .
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