Abstract
Conventional mesa isolation in InAlAs/InGaAs HFETs results in the gate coming in contact with the exposed channel at the mesa sidewall, forming a parasitic gate-leakage path. The authors propose a simple method of recessing the channel edge into the mesa sidewall using a succinic-acid-based selective etchant for InGaAs over InAlAs. SEM photographs confirm the recessing of the channel along the sidewall. Special heterostructure diodes, designed with varying amounts of mesa-sidewall/gate-metal overlap, were fabricated with and without the sidewall isolation step. Electrical measurements confirm the complete elimination of sidewall leakage. for both diodes and HFETs. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.