Abstract
The elementary excitation modes in a narrow channel of conducting electrons in a special GaAs field-effect transistor are evaluated within the random-phase approximation. The system is found to be quasi-two-dimensional (2D) when the width of the channel is small, i.e., there are collective excitations with a dispersion very close to the strictly 2D form. In addition to the low-lying quasi-2D mode there are higher collective modes associated with the subband structure of the device.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
