Abstract
Electroreflectance (ER) spectroscopy has been performed on Si nanocrystals (NCs) fabricated from n-type crystalline Si substrates. The Si NCs were fabricated by anodization with varying anodizing current densities. Two ER features were observed at 1.1–3.2 eV, which were interpreted as due to optical transitions in confined electron–hole pairs. The transition energies reveal that the mean crystal size has a maximum against the increased anodizing current. Furthermore, extra ER features were weakly observed at 3.4 eV corresponding to the E1(E0′) critical points, and the lifetime broadening induced by surface roughening is discussed as an internal origin responsible for the weaken ER features.
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