Abstract
Capacitance-voltage characteristics of MIS structures based on graded band-gap heteroepitaxial HgCdTe (x = 0.22–0.23 and 0.32–0.36) with grown in situ CdTe as a passivating coating are examined. The average surface-state densities as well as mobile- and fixed-charge densities are determined for the HgCdTe/CdTe, HgCdTe/CdTe–SiO2–Si3N4, and HgCdTe/CdTe–ZnTe systems. It is shown that grown in situ CdTe forms a fairly qualitative interface, and deposition of additional SiO2–Si3N4 and ZnTe layers makes it possible to control the electric strength and charges in the dielectric used.
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