Abstract
Transport properties of Hg 1 x Mn x Te photodiodes for 8–14 μm spectral region are investigated. It is shown that the distributions of space charge density, electric field strength and potential in the depletion layer are significantly affected by both majority and minority free carriers. This leads to changes in the bias voltage dependences of the recombination, diffusion and tunneling currents as well as the depletion-layer capacitance. The calculated results account rather well for the experimental data obtained on Hg 1 x Mn x Te ( E g≈0.1 eV) n +–p junctions.
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