Abstract
The electronic structures of arsenic chalcogenide glasses are investigated by the extended Hückel theory which is a simple one-electron LCAO approach. The density of the valence state (DOVS), the optical gap and the imaginary part of the dielectric constant are calculated and found to agree roughly with those observed. Further, the changes in them due to various structural changes are calculated to explain the pressure dependence of the optical gap, the change of DOVS caused by a structural change induced by high pressure and the difference between the DOVSs for the as-deposited and the well-annealed film.
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