Abstract
It has been recently shown that growth of [001]-oriented short period (AC)n/(BC)n vertical superlattices (n∼1−2) spontaneously creates a lateral composition modulation in the substrate plane ([110] direction), where wire-like AC-rich and BC-rich domains alternate with a period of ∼100−200 Å. This creates a new type of lattice structure with orthogonal [001] and [110] strain fields and compositional waves. Using a three-dimensional plane-wave pseudopotential approach, we study here the electronic properties of this type of structure in a GaInAs alloy, predicting valence band splittings into distinctly polarized components, a ⩽100 meV band-gap reduction and strong, type I electron and hole confinement in the In-rich lateral channels.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
