Abstract
Two-dimensional (2D) layered materials transition metal dichalcogenide compound (TMDC), which stack-together and form van der Waals heterostructures, have created interesting phenomena due to their interlayer interactions and their great potential for atomic-scale devices. Various electrical properties have been investigated. The presence of vacancies and their related charge trappings have been reported to affect the electrical properties. In this study, we investigate the electrical properties of hybrid WS2/MoS2 multilayer film deposited on polyethylene terephthalate (PET). The hybrid morphology and signatures are confirmed by the scanning electron microscope image and Raman shift spectra, respectively. We observed a semiconductor like behaviour as well as the large hysteresis which indicates the vacancies inducing charge trappings. This characteristics is different with the electronic characteristics of WS2 and MoS2 multilayer which tend to exhibit insulating behaviours and small hysteresis. This study shows how hybrid dichalcogenide WS2/MoS2 multilayer might create new features for future electronic devices.
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