Abstract
Impacts of annealing temperature and film thickness to the resistivity of Ge2Sb2Te5(GST) have been studied. The resistivity of GST drops when the annealing temperature reaches 180°C, rises above 360°C and the thicker film crystallized more easily. Electronic device of phase change memory also has been fabricated with metal sidewall technology using 5μm lithographic technology. The device was successfully programmed by 100ns of 5V pulse for SET and 10ns of 10V pulse for RESET. More than 100 times on/off ratio has been reached.
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