Abstract

Since the rediscovery of graphene in 2004, this material has attracted an enormous amount of interest owing to its unique structural, mechanical, electronic, and optical properties. Beyond this, the unique properties of graphene have also triggered extensive research on other two‐dimensional (2D) materials including transition metal dichalcogenides (TMDs), particularly for electronic and optoelectronic device applications. In particular, not only single junction but also various heterojunction devices based on 2D materials have afforded novel functionality and advances in many research fields. The availability of various 2D materials could allow the formation of a wide variety of heterojunctions with desired band alignments, thereby providing a powerful fabrication process platform for high‐performance electronic and optoelectronic devices. In this review, the important fabrication techniques of i) doping, ii) contact engineering, and iii) heterojunction formation for improving the performance of 2D‐material‐based devices are first introduced. Promising 2D‐material‐based electronic and optoelectronic devices are then discussed, including lateral/vertical field‐effect transistors (FETs), negative differential resistance (NDR) devices, memory, photodetectors, photovoltaics, and light‐emitting diode (LED) devices.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.