Electronic and electrical properties of siligraphene (g-SiC3) in the presence of several strains

Abstract

Based on the first principles density functional theory (DFT), we have investigated the electronic and electrical properties of siligraphene (g-SiC3) under various percentages of strain. Our results show that the electronic and electrical properties can be controlled using (0% to −10%) strain. The behavior of g-SiC3 is altered from a semi metallic to semiconductor. The electronic band gap is opened under −9% and −10% strain. Also, the geometry of g-SiC3 is altered under with these two percentages of strain due to the bond length between C-Si atoms is increasing. The electrical conductivity of siligraphene g-SiC3 as a function temperature without and with strain has been given. We detected very exciting results. It is affected and changed when at the same percentage of strain, which applied to alter the behavior of g-SiC3 to semiconductor. Then, these properties can be led to generate new 2-D nanomaterials and devices with huge control over their physical properties for a wide range of applications ranging from photovoltaic to photo-catalysis. We show that siligraphene is a very promising 2D material with great impact that can lead to exceptional results in the field of solar energy and other application. Consequently, we push the experimental researches to discover this new 2D nanomaterial (siligraphene) for using in solar cell application.