Abstract
We have directly measured the excitation of electron-hole pairs at a crystal surface by ground-state neutral atoms. Utilizing seeded molecular beam techniques we have scattered hyperthermal (1–6 eV) Xe atoms from the (100) face of a Ge p-i-n diode and recorded the current transient induced due to the scattering process. We find the product of the excitation and collection probability to be ∼10−4 over a range of kinetic energies 2<EXe(eV)<6. The excitation of electron-hole pairs constitutes a small portion of the massive energy loss (ΔE/E∼70%) of the Xe atom to the crystal.
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