Electron traps created in gate oxides by Fowler–Nordheim injections

Abstract

Two types of electron traps, donor-like and acceptor-like, are created in the gate oxide of metal-oxide-semiconductor capacitors by Fowler–Nordheim electron injections. Electrical properties (areal density, capture cross-section, centroid) of each type of trap are determined by using the avalanche electron injection method and by combining capacitance–voltage and current–voltage measurements. These properties are measured with regard to the Fowler–Nordheim fluence up to breakdown and for both injection modes (electrons injected either from the gate or from the substrate of capacitors).