Abstract
Plasma parameters of a SiH 4/H 2 electron-cyclotron-resonance (ECR) plasma are measured in detail as a function of microwave power, where 915 MHz microwaves are used. It is observed that the electron temperature ( T e) in the magnetic field whose gradient is small varies from about 3 eV to 8 eV through the control of the external conditions. From the electromagnetic waves measurements and the simulations of the microwave power absorption, T e is found to depend on the spatial profiles of the power absorption, which suggests that T e in a SiH 4/H 2 ECR plasma can be changed by changing the power absorption profile.
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