Abstract
The observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0Si≡Si3) with dangling bonds positioned along [11̄1], [1̄11], and [111̄] from low-temperature (T≲30 K) electron spin resonance measurements is reported. This is connected with the particular structure (SiOx) of the attendant very near-Si interfacial transition region for the oxidation method invoked. Some instructive information as to the precise atomic modeling of the Si/SiO2 interface is inferred.
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