Abstract
The electron momentum density (EMD) in liquid silicon (Si) has been measured by synchrotron-based Compton scattering. The observed variation in the valence EMD upon melting, reflecting a semiconductor-metal transition of Si, is well explained by the collapse of the Jones zone of crystalline Si. However, the shape of the EMD of liquid Si is considerably broad and retains fairly solid ($\ensuremath{\alpha}$-Si)-like characteristics. The analysis of the Fourier-transformed Compton profiles reveals that the valence electronic state in liquid Si exhibits a marked deviation from the free-electron gas features.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
