Abstract
Ultra-wide bandgap AlGaN has attracted recent attention as a promising channel material for next-generation high electron mobility transistors (HEMTs) for RF power due to its high critical field, excellent transport properties, and potential for operation in extreme environments. However, the effects of temperature on the transport properties are not fully understood. Here, Al0.62Ga0.38N/Al0.45Ga0.55N HEMTs have been fabricated and characterized up to 150 °C at DC and RF to evaluate the effect of temperature on electron mobility and carrier velocity. Measured results indicate that both mobility and carrier velocity exhibit modest dependence on temperature, suggesting that AlGaN channel HEMTs are promising for future RF power applications.
Highlights
S, carrier velocity is proportional to the mobility and the electric field
Al0.62Ga0.38N/Al0.45Ga0.55N high electron mobility transistors (HEMTs) have been fabricated and characterized up to 150 C at DC and RF to evaluate the effect of temperature on electron mobility and carrier velocity
Measured results indicate that both mobility and carrier velocity exhibit modest dependence on temperature, suggesting that AlGaN channel HEMTs are promising for future RF power applications
Summary
S, carrier velocity is proportional to the mobility and the electric field. At high electric fields, the velocity saturates due to a range of scattering mechanisms.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
