Abstract
ABSTRACTWe used electron holography to analyze the dopant profile in a MOS transistor. The overall performance of the holography electron microscope at our laboratory has been confirmed by recording a maximum of 16, 000 numbers of electron interference fringes on a conventional electron microscope film. For thin film specimen preparation, we have developed an FIB system with a modified beam scanning scheme in which a high-frequency analog modulation signal is added to the digital signal of the beam deflector. This has enabled us to smooth the residual surface roughness presumably caused by the glitch-noise of D/A converter and we proved that a nearly atomically smooth surface was obtained as estimated with an AFM and TEM. We used this optimized system to characterize the dopant profile in MOS transistors, and comparisons with the calculated profiles from device simulator have proved that they are in good agreement.
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