Abstract
In this paper, we study the electron effective Landé g-factor in the InAs quantum wire under an applied magnetic field and the Rashba effect. For this goal, we first present an analytic solution to one-particle Schrödinger equation in the presence of both magnetic field and spin–orbit interaction (SOI). Then, using the obtained energy levels, we study the electron effective Landé g-factor. It is found that: (i) The effective Landé g-factor decreases when magnetic field increases. (ii) By increasing the confinement length l 0 , the electron g-factor decreases. (iii) By increasing the strength of SOI, the electron g-factor increases.
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