Abstract
The effect of electron-electron scattering on the electron transport in spin-polarized, two-dimensional electron gas is studied in semiconductor heterostructures. We numerically calculate the mobilities and diffusion coefficients for spin-up and spin-down electrons separately in high-quality heterostructures of GaAs at the temperatures below 10K and the electron sheet density of 2×1011cm−2. The contribution from the electron-electron scattering leads to the characteristic temperature dependence of the transport coefficients both in the field-driven transport (mobilities) and the transport driven by the density gradient (diffusion coefficients), which may help us to detect the effect termed “spin drag” in the experiment. We also find that the reduction of the electron energy arising from the many-particle correlations affects the density-driven transport. It competes with spin drag in a certain condition.
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