Abstract
Zirconium dioxide (ZrO<sub>2</sub>) has excellent physical, chemical, and mechanical properties. These properties make it an excellent material for composite ceramics. High values of dielectric permittivity, mechanical resistance, and high radiation resistance allow it to be used to protect integrated circuits (ICs) from external influences. In this study, we fabricated ZrO<sub>2</sub>/titanium (Ti) ceramic composites by employing electron-beam sintering and a forevacuum-pressure plasma-cathode electron-beam source. We used a scanning electron microscopy method to study the properties of the ceramics after sintering. The results obtained showed that with an increase in the sintering temperature up to 1700&deg;C, the Ti content in the near-surface layer of the composite decreased to almost 0. The depth of the region with low metal component content also increased with an increase in the sintering temperature and reached 2 mm in 3-mm-thick samples. This method can be used in the production of composite materials used in IC packaging.
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